دورية أكاديمية
Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method
| العنوان: | Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method |
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| المؤلفون: | Barbara Swatowska, Wiesław Powroźnik, Halina Czternastek, Gabriela Lewińska, Tomasz Stapiński, Rafał Pietruszka, Bartłomiej S. Witkowski, Marek Godlewski |
| المصدر: | Energies, Vol 14, Iss 19, p 6271 (2021) |
| بيانات النشر: | MDPI AG, 2021. |
| سنة النشر: | 2021 |
| المجموعة: | LCC:Technology |
| مصطلحات موضوعية: | AZO thin films, ALD technique, optical properties, structural properties, electrical parameters, Technology |
| الوصف: | The thin layers of ZnO and ZnO: Al (Al doped zinc oxide—AZO) were deposited by the atomic deposition layer (ALD) method on silicon and glass substrates. The structures were deposited using diethylzinc (DEZ) and deionized water as zinc and oxygen precursors. A precursor of trimethylaluminum (TMA) was used to introduce the aluminum dopant. The present study of ALD-deposited ZnO and AZO films was motivated by their applications in photovoltaics. We attempted to expose several properties of such films. Structural, optical (including ellipsometric measurements) and electrical investigations were performed. We discussed the relations between samples doped with different Al fractions and their properties. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 14196271 1996-1073 |
| Relation: | https://www.mdpi.com/1996-1073/14/19/6271; https://doaj.org/toc/1996-1073 |
| DOI: | 10.3390/en14196271 |
| URL الوصول: | https://doaj.org/article/09f785de9f5d457caeee285b4e906b34 |
| رقم الأكسشن: | edsdoj.09f785de9f5d457caeee285b4e906b34 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 14196271 19961073 |
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| DOI: | 10.3390/en14196271 |