دورية أكاديمية

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

التفاصيل البيبلوغرافية
العنوان: Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits
المؤلفون: Hsin-Yu Liu, Donghao Zhang, Zhongying Zhang, Chaohsu Lai, Zongmin Lin, Chia-En Lee, Lijun Bao, Sheng-Po Chang, Shoou-Jinn Chang
المصدر: IEEE Photonics Journal, Vol 16, Iss 3, Pp 1-9 (2024)
بيانات النشر: IEEE, 2024.
سنة النشر: 2024
المجموعة: LCC:Applied optics. Photonics
LCC:Optics. Light
مصطلحات موضوعية: MicroLEDs, InGaN/GaN MQWs, V-pits, H $_2$, potential barrier, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
الوصف: In this study, Green MicroLEDs with different H2 flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-pits. EQE and relative IQE has a dramatically increase with more hydrogen flow during barrier growth, and thermal endurance and wavelength stability was also improved. The enhancement has been confirmed to come from the reduction of non-radiative recombination centers from small V-pits and higher potential barrier height on sidewall MQWs in V-shaped pits which screen dislocations (TDs). These results demonstrate the advantages of modification H2 flow during barrier growth and also provide a new concept to modulate potential barrier height of the sidewall MQWs for better screening effect for further improvement on MicroLEDs performance.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1943-0655
Relation: https://ieeexplore.ieee.org/document/10494520/; https://doaj.org/toc/1943-0655
DOI: 10.1109/JPHOT.2024.3386111
URL الوصول: https://doaj.org/article/0b86e153bc4e4f5aa9e9a4a44c4b0d14
رقم الأكسشن: edsdoj.0b86e153bc4e4f5aa9e9a4a44c4b0d14
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:19430655
DOI:10.1109/JPHOT.2024.3386111