دورية أكاديمية
Sol-gel CdS layer for TiO2 nanorod-based quantum dots-sensitized solar cells
| العنوان: | Sol-gel CdS layer for TiO2 nanorod-based quantum dots-sensitized solar cells |
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| المؤلفون: | Shixin Chen, Yangqi Meng, Shuang Feng, Tianji Ou |
| المصدر: | Materials Research Express, Vol 11, Iss 1, p 015001 (2024) |
| بيانات النشر: | IOP Publishing, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Materials of engineering and construction. Mechanics of materials LCC:Chemical technology |
| مصطلحات موضوعية: | quantum dot-sensitized solar cells, CdS layer, TiO2 nanorod, sol-gel method, charge recombination, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185 |
| الوصف: | The CdS layer was essential for CdSe quantum dot-sensitized solar cells (QDSSCs) as the seed layer and energy barrier. Here, a novel sol–gel method was employed to prepare the CdS interlayer (SG-CdS) for TiO _2 nanorod-based QDSSCs. Due to the sufficient reaction of the Cd and S sources in the sol–gel solution, SG-CdS exhibited fewer impurities than CdS produced by commonly used chemical bath deposition (CBD-CdS). QDSSCs with SG-CdS exhibited an open-circuit voltage of 490 mV, a short-circuit current density of 14.12 mA cm ^−2 , and a fill factor of 0.35. The power conversion efficiency of the QDSSCs with SG-CdS was 2.48%, which was higher than that of the QDSSCs with CBD-CdS (2.02%). Moreover, electrochemical impedance spectroscopy showed that the QDSSCs with SG-CdS yielded a charge recombination resistance of 99.92 Ω at a bias voltage of −0.5 V, demonstrating less charge recombination than the QDSSCs with CBD-CdS (82.16 Ω). Therefore, the performance of the CdSe QDSSCs could be improved by reducing the impurities in CdS. This study revealed the advantages of SG-CdS in replacing CBD-CdS as the interlayer for charge transport, as well as good applicability with nanorod photoanodes in QDSSCs. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2053-1591 |
| Relation: | https://doaj.org/toc/2053-1591 |
| DOI: | 10.1088/2053-1591/ad18f2 |
| URL الوصول: | https://doaj.org/article/e0db8710516a4b77b44ddbc97c2e1d44 |
| رقم الأكسشن: | edsdoj.0db8710516a4b77b44ddbc97c2e1d44 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 20531591 |
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| DOI: | 10.1088/2053-1591/ad18f2 |