دورية أكاديمية

Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box

التفاصيل البيبلوغرافية
العنوان: Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box
المؤلفون: G. A. Oakes, V. N. Ciriano-Tejel, D. F. Wise, M. A. Fogarty, T. Lundberg, C. Lainé, S. Schaal, F. Martins, D. J. Ibberson, L. Hutin, B. Bertrand, N. Stelmashenko, J. W. A. Robinson, L. Ibberson, A. Hashim, I. Siddiqi, A. Lee, M. Vinet, C. G. Smith, J. J. L. Morton, M. F. Gonzalez-Zalba
المصدر: Physical Review X, Vol 13, Iss 1, p 011023 (2023)
بيانات النشر: American Physical Society, 2023.
سنة النشر: 2023
المجموعة: LCC:Physics
مصطلحات موضوعية: Physics, QC1-999
الوصف: Three key metrics for readout systems in quantum processors are measurement speed, fidelity, and footprint. Fast high-fidelity readout enables midcircuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state of the art achieving spin readout fidelity of 99.2% in less than 6 μs fitted from a physical model. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2160-3308
Relation: https://doaj.org/toc/2160-3308
DOI: 10.1103/PhysRevX.13.011023
URL الوصول: https://doaj.org/article/d0e75e9ba5a34a2583b577a40f028923
رقم الأكسشن: edsdoj.0e75e9ba5a34a2583b577a40f028923
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:21603308
DOI:10.1103/PhysRevX.13.011023