In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In0.53Ga0.47As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility ( ${\mu }_{\mathrm{ eff}}$ ) characteristics. As a result, the fabricated devices showed the lowest off-leakage current ( ${I} _{\mathrm{ off}}$ ), subthreshold slope ( ${S}$ . ${S}$ .) and high $\mu _{\mathrm{ eff}}$ among reported GaSb p-MOSFETs.
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