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Development of EUV interference lithography for 25 nm line/space patterns

التفاصيل البيبلوغرافية
العنوان: Development of EUV interference lithography for 25 nm line/space patterns
المؤلفون: A.K. Sahoo, P.-H. Chen, C.-H. Lin, R.-S. Liu, B.-J. Lin, T.-S. Kao, P.-W. Chiu, T.-P. Huang, W.-Y. Lai, J. Wang, Y.-Y. Lee, C.-K. Kuan
المصدر: Micro and Nano Engineering, Vol 20, Iss , Pp 100215- (2023)
بيانات النشر: Elsevier, 2023.
سنة النشر: 2023
المجموعة: LCC:Electronics
LCC:Technology (General)
مصطلحات موضوعية: EUV interference lithography, Transmission grating mask, Line/space patterns, Half-pitch (HP), Hydrogen silsesquioxane (HSQ), Slits (SL), Electronics, TK7800-8360, Technology (General), T1-995
الوصف: In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2590-0072
Relation: http://www.sciencedirect.com/science/article/pii/S259000722300045X; https://doaj.org/toc/2590-0072
DOI: 10.1016/j.mne.2023.100215
URL الوصول: https://doaj.org/article/17765dce46814cdeb6793697e9abd2e4
رقم الأكسشن: edsdoj.17765dce46814cdeb6793697e9abd2e4
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:25900072
DOI:10.1016/j.mne.2023.100215