دورية أكاديمية
Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks
| العنوان: | Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks |
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| المؤلفون: | Wen-Teng Chang, Meng-His Li, Chun-Hao Hsu, Wen-Chin Lin, Wen-Kuan Yeh |
| المصدر: | IEEE Open Journal of Nanotechnology, Vol 2, Pp 72-77 (2021) |
| بيانات النشر: | IEEE, 2021. |
| سنة النشر: | 2021 |
| المجموعة: | LCC:Chemical technology LCC:Electrical engineering. Electronics. Nuclear engineering |
| مصطلحات موضوعية: | Work function metal, threshold voltage tuning, energy-dispersive X-ray spectroscopy, FinFETs, reliability, Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971 |
| الوصف: | High-k metal gate technology improves the performance and reduces the gate leakage current of metal–oxide–semiconductor field-effect transistors (MOSFETs). This study investigated four different work function metal (WFM) stacks in the gate of fin field-effect transistors (FinFETs) on the same substrate. These devices not only successfully produced distinct levels of threshold voltages (|Vt|) but also converted n- to p-type features merely by adding p-type WFM in the gate of the MOSFETs. All of the devices satisfied short-channel effects with shrinking channel length. The gate-to-body electric field induced drain leakage due to the nature of bulk FinFETs. However, the n- and p-type gate stacks presented different gate current leakage. For reliability, hot carrier injection (HCI) could have a higher reliability impact than the negative-bias temperature instability (NBTI) for p-MOSFET, although the stress voltage of HCI was roughly half that of the NBTI test. This multi-threshold voltage tuning allows designers to design CMOS and choose the trade-off between low power consumption and high performance on the same platform. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2644-1292 |
| Relation: | https://ieeexplore.ieee.org/document/9528922/; https://doaj.org/toc/2644-1292 |
| DOI: | 10.1109/OJNANO.2021.3109897 |
| URL الوصول: | https://doaj.org/article/1891743a4eaa498f96f6e993d8118506 |
| رقم الأكسشن: | edsdoj.1891743a4eaa498f96f6e993d8118506 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 26441292 |
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| DOI: | 10.1109/OJNANO.2021.3109897 |