Achieving the ultra-broadband near-infrared La3SnGa5O14:Cr3+ phosphor via multiple lattice sites occupation for biological nondestructive detection and night-vision technology
التفاصيل البيبلوغرافية
العنوان:
Achieving the ultra-broadband near-infrared La3SnGa5O14:Cr3+ phosphor via multiple lattice sites occupation for biological nondestructive detection and night-vision technology
Currently, near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) have become a research hotspot, however, the NIR phosphors continue to face the problems of narrowband emission and poor thermal stability. Therefore, in order to solve these problems, La3SnGa5O14:xCr3+ phosphors with ultra-broadband NIR emission were obtained by multiple lattice sites occupation, featuring ultra-broadband emission in the range of 650–1300 nm with full width at half-maximum (FWHM) up to 333 nm under 437 nm excitation. By tuning the concentration of Cr3+, the FWHM value can reach 333–417 nm La3SnGa5O14:Cr3+ also exhibits favorable thermal stability, maintaining 90.5% and 67% of the initial intensity at 373 K and 423 K, respectively. The NIR pc-LEDs were manufactured by combining the blue light chip with La3SnGa5O14:Cr3+ phosphor. When the NIR pc-LED was switched off, no image could be generated from the infrared camera. Instead, the image captured by the infrared camera was visible in the light of the NIR pc-LED lamp. Such results imply that La3SnGa5O14:Cr3+ may be a prospective candidate for future biological accurate nondestructive detection and night-vision technology.
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