دورية أكاديمية
Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications
| العنوان: | Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications |
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| المؤلفون: | LI Weihan, QIAO Yu, SHU Da, WANG Xinchang |
| المصدر: | Shanghai Jiaotong Daxue xuebao, Vol 57, Iss 8, Pp 1078-1085 (2023) |
| بيانات النشر: | Editorial Office of Journal of Shanghai Jiao Tong University, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Engineering (General). Civil engineering (General) LCC:Chemical engineering LCC:Naval architecture. Shipbuilding. Marine engineering |
| مصطلحات موضوعية: | hot filament chemical vapor deposition (hfcvd), diamond film, growth rate, quality, heat dissipation, Engineering (General). Civil engineering (General), TA1-2040, Chemical engineering, TP155-156, Naval architecture. Shipbuilding. Marine engineering, VM1-989 |
| الوصف: | Diamond has an extremely high thermal conductivity, making it to have a great potential as a heat dissipation material. Based on the hot filament chemical vapor deposition (HFCVD) technique, diamond thick films were deposited on silicon carbide substrates by using the multi-step method in this paper. The scanning electron microscopy (SEM) and Raman spectroscopy were adopted for characterizing the samples. The influences of filament power, carbon concentration, and reactive pressure on the growth rate and quality of the diamond films were systematically studied. It is found that the diamond film with the best quality is synthesized by adopting a filament power of 1 600 W, a methane/hydrogen flux ratio of 18/300 (nucleation stage) and 14/300 (growth stage), and a reactive pressure of 4 kPa. The corresponding growth rate is 1.4 μm/h. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | Chinese |
| تدمد: | 1006-2467 |
| Relation: | https://xuebao.sjtu.edu.cn/article/2023/1006-2467/1006-2467-57-8-1078.shtml; https://doaj.org/toc/1006-2467 |
| DOI: | 10.16183/j.cnki.jsjtu.2022.043 |
| URL الوصول: | https://doaj.org/article/1d95803cec7946a7bc1bae0f0d0a3c63 |
| رقم الأكسشن: | edsdoj.1d95803cec7946a7bc1bae0f0d0a3c63 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 10062467 |
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| DOI: | 10.16183/j.cnki.jsjtu.2022.043 |