دورية أكاديمية
Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates
| العنوان: | Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates |
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| المؤلفون: | T. Imajo, K. Toko, R. Takabe, N. Saitoh, N. Yoshizawa, T. Suemasu |
| المصدر: | Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-5 (2018) |
| بيانات النشر: | SpringerOpen, 2018. |
| سنة النشر: | 2018 |
| المجموعة: | LCC:Materials of engineering and construction. Mechanics of materials |
| مصطلحات موضوعية: | Germanides, Epitaxy, Nanostructures, Solar cells, Materials of engineering and construction. Mechanics of materials, TA401-492 |
| الوصف: | Abstract Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300−700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1931-7573 1556-276X |
| Relation: | http://link.springer.com/article/10.1186/s11671-018-2437-1; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X |
| DOI: | 10.1186/s11671-018-2437-1 |
| URL الوصول: | https://doaj.org/article/1fafd755ebb2462693ff3c95aa7e0d94 |
| رقم الأكسشن: | edsdoj.1fafd755ebb2462693ff3c95aa7e0d94 |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 19317573 1556276X |
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| DOI: | 10.1186/s11671-018-2437-1 |