دورية أكاديمية

Annealing assisted substrate coherency and high-temperature antiferromagnetic insulating transition in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films

التفاصيل البيبلوغرافية
العنوان: Annealing assisted substrate coherency and high-temperature antiferromagnetic insulating transition in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films
المؤلفون: L. F. Wang, X. L. Tan, P. F. Chen, B. W. Zhi, B. B. Chen, Z. Huang, G. Y. Gao, W. B. Wu
المصدر: AIP Advances, Vol 3, Iss 5, Pp 052106-052106 (2013)
بيانات النشر: AIP Publishing LLC, 2013.
سنة النشر: 2013
المجموعة: LCC:Physics
مصطلحات موضوعية: Physics, QC1-999
الوصف: Bulk La0.67Ca0.33MnO3 (LCMO) and NdGaO3 (NGO) have the same Pbnm symmetry but different orthorhombic lattice distortions, yielding an anisotropic strain state in the LCMO epitaxial film grown on the NGO(001) substrate. The films are optimally doped in a ferromagnetic-metal ground state, after being ex-situ annealed in oxygen atmosphere, however, they show strikingly an antiferromagnetic-insulating (AFI) transition near 250 K, leading to a phase separation state with tunable phase instability at the temperatures below. To explain this drastic strain effect, the films with various thicknesses were ex-situ annealed under various annealing parameters. We demonstrate that the ex-situ annealing can surprisingly improve the epitaxial quality, resulting in the films with true substrate coherency and the AFI ground state. And the close linkage between the film morphology and electronic phase evolution implies that the strain-mediated octahedral deformation and rotation could be assisted by ex-situ annealing, and moreover, play a key role in controlling the properties of oxide heterostructures.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2158-3226
Relation: https://doaj.org/toc/2158-3226
DOI: 10.1063/1.4804541
URL الوصول: https://doaj.org/article/d20f64b9fb664a68b561513423d7362c
رقم الأكسشن: edsdoj.20f64b9fb664a68b561513423d7362c
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:21583226
DOI:10.1063/1.4804541