For n-i-p typed flexible perovskite solar cells (fPSCs), the doped hole transport layer significantly impacts the devices' long-term stability. Using dopant-free organic hole transport materials (d-HTMs) is promising for stable fPSCs. However, the low conductivity of d-HTMs limited their thickness, making them sensitive to the surface morphology of the perovskite film's upper surface. Here, we report a chemical polishing strategy using 1-hexyl-3-methylimidazolium acetate (HMIM∙Ac) as the polishing reagent to enhance the upper surface of the perovskite film, which could form a smooth and flat surface. Meanwhile, the treatment can reduce surface defects and smaller grains on top of the surface. Then, we deposite an ultra-thin dopant-free PM6 layer, a typical hole transport layer, on top of the polished perovskite film. The PM6 layer shows an improved face-on orientation and then carrier mobility. Moreover, suppressed non-radiative recombination at the perovskite/PM6 interface is also observed, translating into a higher open-circuit voltage and fill factor of the fPSCs. As a result, a champion power conversion efficiency (PCE) of 17.76 %, with an open-circuit voltage of 1.025 V and fill factor of 78.2 %, is obtained, which is one of the highest PCEs among the reported fPSCs based on d-HTMs. Our strategy demonstrates a facile but effective way of developing high-efficiency and stable fPSCs for future applications.
Full Text Finder