دورية أكاديمية
Ferromagnetism in vanadium-doped Bi2Se3 topological insulator films
| العنوان: | Ferromagnetism in vanadium-doped Bi2Se3 topological insulator films |
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| المؤلفون: | Liguo Zhang, Dapeng Zhao, Yunyi Zang, Yonghao Yuan, Gaoyuan Jiang, Menghan Liao, Ding Zhang, Ke He, Xucun Ma, Qikun Xue |
| المصدر: | APL Materials, Vol 5, Iss 7, Pp 076106-076106-6 (2017) |
| بيانات النشر: | AIP Publishing LLC, 2017. |
| سنة النشر: | 2017 |
| المجموعة: | LCC:Biotechnology LCC:Physics |
| مصطلحات موضوعية: | Biotechnology, TP248.13-248.65, Physics, QC1-999 |
| الوصف: | With molecular beam epitaxy, we grew uniformly vanadium-doped Bi2Se3 films which exhibit ferromagnetism with perpendicular magnetic anisotropy. A systematic study on the magneto-transport properties of the films revealed the crucial role of topological surface states in ferromagnetic coupling. The enhanced ferromagnetism with reduced carrier density can support quantum anomalous Hall phase in the films, though the anomalous Hall resistance is far from quantization due to high carrier density. The topological surface states of films exhibit a gap of ∼180 meV which is unlikely to be magnetically induced but may significantly influence the quantum anomalous Hall effect in the system. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2166-532X |
| Relation: | https://doaj.org/toc/2166-532X |
| DOI: | 10.1063/1.4990548 |
| URL الوصول: | https://doaj.org/article/259ffdeba9d549e0b55a7cde18c0da23 |
| رقم الأكسشن: | edsdoj.259ffdeba9d549e0b55a7cde18c0da23 |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Scitation. 
Full Text Finder | تدمد: | 2166532X |
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| DOI: | 10.1063/1.4990548 |