دورية أكاديمية

Evolution of morphological, crystal structure, and electrical properties of Ba-Pb-Bi-O superconducting materials

التفاصيل البيبلوغرافية
العنوان: Evolution of morphological, crystal structure, and electrical properties of Ba-Pb-Bi-O superconducting materials
المؤلفون: Agung Imaduddin, Satrio Herbirowo, Heri Nugraha, Hendrik Hendrik, Aisatun Aisatun, Anastasia Ruth Giovanni, Mukhtar Effendi, Kartika Sari, Andika Widya Pramono, Akhmad Herman Yuwono
المصدر: South African Journal of Chemical Engineering, Vol 46, Iss , Pp 112-121 (2023)
بيانات النشر: Elsevier, 2023.
سنة النشر: 2023
المجموعة: LCC:Chemical engineering
مصطلحات موضوعية: Ba4Bi(PbO4)3, BaPbO3, Superconductor, Critical temperature, Bi-doping, Sintering temperature, Chemical engineering, TP155-156
الوصف: Bismuthate superconductor material has a transition from a semiconductor/conductor to a superconductor. Research on this transition temperature has attracted many researchers' attention to reveal this material's superconducting properties. We synthesized the materials by the solid-state reaction method. Samples were synthesized with variations in sintering temperature and also with variations in Bi-doping. X-ray diffractometer (XRD), scanning electron microscope (SEM), and resistivity versus temperature measurements were used to analyse the crystal structure, morphology, and electrical characteristics, respectively. Based on SEM results, there were no significant changes with the increase in sintering temperature. However, from x = 0 to 0.40 there was a change in the crystallization properties which changed according to the amount of doping of the Bi element. Based on the XRD results, the major phases were Ba4Bi(PbO4)3 with a tetragonal crystal structure and P4/mmm space group, and BaPbO3 with a cubic crystal structure and Pm-3m space group . The increase in the sintering temperature causes a change in the insulator-metal-insulator properties. In the variation of Bi composition, the evolution of phase formation of Ba4Bi(PbO4)3 starts at x = 0.20 and then decreases drastically when x = 0.40. TC was detected at a value of x less than 0.35, indicating that the effect of Bi composition below x = 0.35 does not significantly affect the electrical properties. The increase in the Bi composition causes changes in the metal-insulator-metal properties. At x = 0.2 to 0.25, there is a change in the crystal structure which is thought to cause the semiconductor properties to be above the TC.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1026-9185
Relation: http://www.sciencedirect.com/science/article/pii/S1026918523000690; https://doaj.org/toc/1026-9185
DOI: 10.1016/j.sajce.2023.07.014
URL الوصول: https://doaj.org/article/25dc64d8d56e4e1488dd875149d14d75
رقم الأكسشن: edsdoj.25dc64d8d56e4e1488dd875149d14d75
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:10269185
DOI:10.1016/j.sajce.2023.07.014