دورية أكاديمية

Epitaxial Growth of SrTiO3 Films on Cube-Textured Cu-Clad Substrates by PLD at Low Temperature Under Reducing Atmosphere

التفاصيل البيبلوغرافية
العنوان: Epitaxial Growth of SrTiO3 Films on Cube-Textured Cu-Clad Substrates by PLD at Low Temperature Under Reducing Atmosphere
المؤلفون: J. A. Padilla, E. Xuriguera, L. Rodríguez, A. Vannozzi, M. Segarra, G. Celentano, M. Varela
المصدر: Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
بيانات النشر: SpringerOpen, 2017.
سنة النشر: 2017
المجموعة: LCC:Materials of engineering and construction. Mechanics of materials
مصطلحات موضوعية: Epitaxy, Thin film texture, High-temperature superconductivity, Pulsed laser deposition, Electron diffraction, X-ray diffraction, Materials of engineering and construction. Mechanics of materials, TA401-492
الوصف: Abstract The growth of epitaxial {001} SrTiO3 (STO) on low-cost cube-textured Cu-based clad substrate at low temperature was carried out by means of pulsed laser deposition (PLD). STO film was deposited in one step under a reducing atmosphere (5% H2 and 95% Ar mixture) to prevent the oxidation of the metal surface. The optimization of PLD parameters leads to a sharpest biaxial texture at a temperature as low as 500 °C and a thickness of 500 nm with a (100) STO layer. The upper limit of highly textured STO thickness was also investigated. The maximum thickness which retains the best quality {001} texture is 800 nm, since the texture is preserved not only through the layer but also on the surface. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements showed that STO films are continuous, dense, and smooth with very low roughness (between 5 and 7 nm). This paper describes the development of STO layer by means of PLD in absence of oxygen throughout the process, suggesting an alternative and effective method for growing highly {001} textured STO layer on low-cost metal substrates.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1931-7573
1556-276X
Relation: http://link.springer.com/article/10.1186/s11671-017-1997-9; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X
DOI: 10.1186/s11671-017-1997-9
URL الوصول: https://doaj.org/article/25f4eb4d05e14904a653d9022a617a28
رقم الأكسشن: edsdoj.25f4eb4d05e14904a653d9022a617a28
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:19317573
1556276X
DOI:10.1186/s11671-017-1997-9