دورية أكاديمية
Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors
| العنوان: | Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors |
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| المؤلفون: | Wanjie Xu, Hei Wong, Hiroshi Iwai |
| المصدر: | Advances in Condensed Matter Physics, Vol 2015 (2015) |
| بيانات النشر: | Wiley, 2015. |
| سنة النشر: | 2015 |
| المجموعة: | LCC:Physics |
| مصطلحات موضوعية: | Physics, QC1-999 |
| الوصف: | A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1687-8108 1687-8124 |
| Relation: | https://doaj.org/toc/1687-8108; https://doaj.org/toc/1687-8124 |
| DOI: | 10.1155/2015/605987 |
| URL الوصول: | https://doaj.org/article/269ab832ca914a9aa76c262338963392 |
| رقم الأكسشن: | edsdoj.269ab832ca914a9aa76c262338963392 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 16878108 16878124 |
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| DOI: | 10.1155/2015/605987 |