دورية أكاديمية
Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces
العنوان: | Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces |
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المؤلفون: | Jia-Juen Ong, Wei-Lan Chiu, Ou-Hsiang Lee, Chia-Wen Chiang, Hsiang-Hung Chang, Chin-Hung Wang, Kai-Cheng Shie, Shih-Chi Yang, Dinh-Phuc Tran, King-Ning Tu, Chih Chen |
المصدر: | Materials, Vol 15, Iss 5, p 1888 (2022) |
بيانات النشر: | MDPI AG, 2022. |
سنة النشر: | 2022 |
المجموعة: | LCC:Technology LCC:Electrical engineering. Electronics. Nuclear engineering LCC:Engineering (General). Civil engineering (General) LCC:Microscopy LCC:Descriptive and experimental mechanics |
مصطلحات موضوعية: | Cu/SiO2 hybrid bonding, highly (111)-nanotwinned Cu, low temperature bonding, microelectronic packaging, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85 |
الوصف: | We adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO2 hybrid bonding. Electroplating was employed to fabricate arrays of Cu vias with 78% (111) surface grains. The bonding temperature can be lowered to 200 °C, and the pressure is as low as 1.06 MPa. The bonding process can be accomplished by a 12-inch wafer-to-wafer scheme. The measured specific contact resistance is 1.2 × 10−9 Ω·cm2, which is the lowest value reported in related literature for Cu-Cu joints bonded below 300 °C. The joints possess excellent thermal stability up to 375 °C. The bonding mechanism is also presented to provide more understanding on hybrid bonding. |
نوع الوثيقة: | article |
وصف الملف: | electronic resource |
اللغة: | English |
تدمد: | 1996-1944 |
Relation: | https://www.mdpi.com/1996-1944/15/5/1888; https://doaj.org/toc/1996-1944 |
DOI: | 10.3390/ma15051888 |
URL الوصول: | https://doaj.org/article/277bad7c4c904d249e62bf45845afc01 |
رقم الأكسشن: | edsdoj.277bad7c4c904d249e62bf45845afc01 |
قاعدة البيانات: | Directory of Open Access Journals |
تدمد: | 19961944 |
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DOI: | 10.3390/ma15051888 |