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Simulation Modelling of Silicon Gated Field Emitter Based Electronic Circuits

التفاصيل البيبلوغرافية
العنوان: Simulation Modelling of Silicon Gated Field Emitter Based Electronic Circuits
المؤلفون: Robert Hay, Ranajoy Bhattacharya, Winston Chern, Girish Rughoobur, Akintunde I. Akinwande, Jim Browning
المصدر: Applied Sciences, Vol 13, Iss 23, p 12807 (2023)
بيانات النشر: MDPI AG, 2023.
سنة النشر: 2023
المجموعة: LCC:Technology
LCC:Engineering (General). Civil engineering (General)
LCC:Biology (General)
LCC:Physics
LCC:Chemistry
مصطلحات موضوعية: field emitter arrays, vacuum transistors, oscillator circuits, logic circuits, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999
الوصف: Vacuum transistors (VTs) are promising candidates in electronics due to their fast response and ability to function in harsh environments. In this study, several oscillator and logic gate circuit simulations using VTs are demonstrated. Silicon-gated field emitter arrays (Si-GFEAs) with 1000 × 1000 arrays were used experimentally to create a VT model. First, transfer and output characteristics sweeps were measured, and based on those data, an LTspice vacuum transistor (VT) model was developed. Then, the model was used to develop Wein and Ring oscillator circuits. The circuits were analytically simulated using LTspice, where the collector bias voltage was 200 V DC, and the gate bias voltage was 30–40 V DC. The Wein oscillator circuit produced a frequency of 102 kHz with a magnitude of 26 Vpp. The Ring oscillator produced a frequency of 1.14 MHz with a magnitude of 4 Vpp. Furthermore, two logic circuits, NOR and NAND gates, were also demonstrated using LTspice modeling. These simulation results illustrate the feasibility of integrating VTs into functional integrated circuits and provide a design approach for future on-chip vacuum transistors applied in logic or radio-frequency (RF) devices.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2076-3417
Relation: https://www.mdpi.com/2076-3417/13/23/12807; https://doaj.org/toc/2076-3417
DOI: 10.3390/app132312807
URL الوصول: https://doaj.org/article/d29568243fd34db68d5d2144d1d41fd0
رقم الأكسشن: edsdoj.29568243fd34db68d5d2144d1d41fd0
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:20763417
DOI:10.3390/app132312807