دورية أكاديمية
Correlation between the density of defect states (DDS) and cross-linking of corner/edge sharing GeSe4 tetrahedral structural units
| العنوان: | Correlation between the density of defect states (DDS) and cross-linking of corner/edge sharing GeSe4 tetrahedral structural units |
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| المؤلفون: | Shiv Kumar Pal, A. Dahshan, Neeraj Mehta |
| المصدر: | Heliyon, Vol 9, Iss 11, Pp e21424- (2023) |
| بيانات النشر: | Elsevier, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Science (General) LCC:Social sciences (General) |
| مصطلحات موضوعية: | Amorphous materials, Defects, Density of defect states, Electrical properties, A.C. conductivity, Science (General), Q1-390, Social sciences (General), H1-99 |
| الوصف: | We have estimated the DDS in the STSG [Se78-xTe20Sn2Gex (x = 0, 2, 4, 6)] system by using the Correlated Barrier Hopping (CBH) model by performing A.C. conduction measurements in the frequency range (1 kHz–10 kHz) and temperature underneath the glass transition temperature (303–333) K. The detailed analysis reveals that bi-polaron hopping is a leading conduction mechanism over single-polaron hopping. Further, there is a noticeable reduction in DDS with increasing concentration of Ge beyond the composition x = 2. A close inspection indicates that cross-linking of Se with Ge has an important role in controlling the DDS in terms of the corner/edge sharing configurations in the structural unit of GeSe4 tetrahedral. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2405-8440 |
| Relation: | http://www.sciencedirect.com/science/article/pii/S2405844023086322; https://doaj.org/toc/2405-8440 |
| DOI: | 10.1016/j.heliyon.2023.e21424 |
| URL الوصول: | https://doaj.org/article/c3198c6a09e7403e856ceb620b7df2fb |
| رقم الأكسشن: | edsdoj.3198c6a09e7403e856ceb620b7df2fb |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 24058440 |
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| DOI: | 10.1016/j.heliyon.2023.e21424 |