دورية أكاديمية
Programmable van‐der‐Waals heterostructure‐enabled optoelectronic synaptic floating‐gate transistors with ultra‐low energy consumption
| العنوان: | Programmable van‐der‐Waals heterostructure‐enabled optoelectronic synaptic floating‐gate transistors with ultra‐low energy consumption |
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| المؤلفون: | Yilin Sun, Mingjie Li, Yingtao Ding, Huaipeng Wang, Han Wang, Zhiming Chen, Dan Xie |
| المصدر: | InfoMat, Vol 4, Iss 10, Pp n/a-n/a (2022) |
| بيانات النشر: | Wiley, 2022. |
| سنة النشر: | 2022 |
| المجموعة: | LCC:Materials of engineering and construction. Mechanics of materials LCC:Information technology |
| مصطلحات موضوعية: | float‐gating transistor, optoelectronic synapses, programmable synaptic plasticity, ultra‐low energy consumption, van‐der‐Waals heterostructures, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64 |
| الوصف: | Abstract Van der Waals (vdW) heterostructures provide a unique opportunity to develop various electronic and optoelectronic devices with specific functions by designing novel device structures, especially for bioinspired neuromorphic optoelectronic devices, which require the integration of nonvolatile memory and excellent optical responses. Here, we demonstrate a programmable optoelectronic synaptic floating‐gate transistor based on multilayer graphene/h‐BN/MoS2 vdW heterostructures, where both plasticity emulation and modulation were successfully realized in a single device. The dynamic tunneling process of photogenerated carriers through the as‐fabricated vdW heterostructures contributed to a large memory ratio (105) between program and erase states. Our device can work as a functional or silent synapse by applying a program/erase voltage spike as a modulatory signal to determine the response to light stimulation, leading to a programmable operation in optoelectronic synaptic transistors. Moreover, an ultra‐low energy consumption per light spike event (~2.5 fJ) was obtained in the program state owing to a suppressed noise current by program operation in our floating‐gate transistor. This study proposes a feasible strategy to improve the functions of optoelectronic synaptic devices with ultra‐low energy consumption based on vdW heterostructures designed for highly efficient artificial neural networks. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2567-3165 |
| Relation: | https://doaj.org/toc/2567-3165 |
| DOI: | 10.1002/inf2.12317 |
| URL الوصول: | https://doaj.org/article/e31ff163b0234252b4174154ba28a4f3 |
| رقم الأكسشن: | edsdoj.31ff163b0234252b4174154ba28a4f3 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 25673165 |
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| DOI: | 10.1002/inf2.12317 |