دورية أكاديمية
Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
| العنوان: | Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy |
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| المؤلفون: | Esmat Farzana, Akhil Mauze, Joel B. Varley, Thomas E. Blue, James S. Speck, Aaron R. Arehart, Steven A. Ringel |
| المصدر: | APL Materials, Vol 7, Iss 12, Pp 121102-121102-9 (2019) |
| بيانات النشر: | AIP Publishing LLC, 2019. |
| سنة النشر: | 2019 |
| المجموعة: | LCC:Biotechnology LCC:Physics |
| مصطلحات موضوعية: | Biotechnology, TP248.13-248.65, Physics, QC1-999 |
| الوصف: | The impact of high energy neutron irradiation on the creation of specific radiation-induced deep level defect states and the ensuing influence of these defects on the electronic properties of (010) β-Ga2O3, doped with Ge and grown by plasma-assisted molecular beam epitaxy, were explored. A significant amount of carrier removal was observed in the irradiated samples exposed to 1 MeV equivalent neutron fluences of 8.5 × 1014 cm−2 and 1.7 × 1015 cm−2, which suggests the formation of compensating defects by neutron irradiation. Using a combination of deep level transient/optical spectroscopy (DLTS/DLOS) techniques to probe the entire ∼4.8 eV bandgap with high energy resolution, three specific trap states were introduced by neutron irradiation at EC-1.22 eV, EC-2.00 eV, and EC-0.78 eV. Of these, the former two states, observed by DLOS, were also present prior to irradiation, whereas the trap at EC-0.78 eV, observed by DLTS, was not evident prior to neutron irradiation. The radiation dependence suggests that intrinsic point defects are the likely physical sources for these states. Subsequent lighted capacitance-voltage measurements further revealed that these three states are the source for the observed strong carrier compensation, with the trap at EC-2.00 eV appearing as the strongest compensating defect for the neutron-irradiated β-Ga2O3. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2166-532X |
| Relation: | https://doaj.org/toc/2166-532X |
| DOI: | 10.1063/1.5126463 |
| URL الوصول: | https://doaj.org/article/cc321bbcea564f34a61ec96c00a3a37e |
| رقم الأكسشن: | edsdoj.321bbcea564f34a61ec96c00a3a37e |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Scitation. 
Full Text Finder | تدمد: | 2166532X |
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| DOI: | 10.1063/1.5126463 |