دورية أكاديمية

Atomic Layer-Deposited Aluminum Oxide Hinders Iodide Migration and Stabilizes Perovskite Solar Cells

التفاصيل البيبلوغرافية
العنوان: Atomic Layer-Deposited Aluminum Oxide Hinders Iodide Migration and Stabilizes Perovskite Solar Cells
المؤلفون: Chittaranjan Das, Malgorzata Kot, Tim Hellmann, Carolin Wittich, Eric Mankel, Iwan Zimmermann, Dieter Schmeisser, Mohammad Khaja Nazeeruddin, Wolfram Jaegermann
المصدر: Cell Reports Physical Science, Vol 1, Iss 7, Pp 100112- (2020)
بيانات النشر: Elsevier, 2020.
سنة النشر: 2020
المجموعة: LCC:Physics
مصطلحات موضوعية: perovskite solar cells, iodine migration, stability, X-ray photoelectron spectroscopy, atomic layer deposition, aluminum oxide, Physics, QC1-999
الوصف: Summary: Iodide migration causes degradation of the perovskite solar cells. Here, we observe the direct migration of iodide into the hole-transport layer in a device. We demonstrate that ultrathin room temperature atomic layer-deposited Al2O3 on the perovskite surface very effectively hinders the migration. The perovskite-Al2O3 interface enables charge transfer across the Al2O3 layer in the solar cells, without causing any drastic changes in the properties of the perovskite absorber. Furthermore, it helps to preserve the initial properties of the perovskite film during exposure to light and air under real operating conditions, and thus, improves the stability of the solar cells. The ultrathin Al2O3 layer deposited at room temperature significantly increases the lifetime of the perovskite solar cells, and we hope this may be a step toward the mass production of stable devices.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2666-3864
Relation: http://www.sciencedirect.com/science/article/pii/S2666386420301119; https://doaj.org/toc/2666-3864
DOI: 10.1016/j.xcrp.2020.100112
URL الوصول: https://doaj.org/article/3253a11e0683462aa1c515994c0db26f
رقم الأكسشن: edsdoj.3253a11e0683462aa1c515994c0db26f
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:26663864
DOI:10.1016/j.xcrp.2020.100112