دورية أكاديمية
Electronic Structures of Graphene/MoS2 Heterostructure: Effects of Stacking Orientation, Element Substitution, and Interlayer Distance
| العنوان: | Electronic Structures of Graphene/MoS2 Heterostructure: Effects of Stacking Orientation, Element Substitution, and Interlayer Distance |
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| المؤلفون: | Dian Putri Hastuti, Kenji Nawa, Kohji Nakamura |
| المصدر: | Indonesian Journal of Chemistry, Vol 23, Iss 1, Pp 140-147 (2022) |
| بيانات النشر: | Department of Chemistry, Universitas Gadjah Mada, 2022. |
| سنة النشر: | 2022 |
| المجموعة: | LCC:Chemistry |
| مصطلحات موضوعية: | graphene, transition-metal dichalcogenide, heterostructure, electronic structure, first-principles calculations, Chemistry, QD1-999 |
| الوصف: | Effects of stacking orientation, element substitution, and interlayer distance on electronic structures of graphene/MoS2 heterostructures were investigated using first-principles calculations. The results predicted that the stacking orientation does not take a crucial role in changing the electronic structures in contrast to element substitution, which converts the system from semiconductor to metallic. A bandgap opening originating in a Dirac band of graphene is found to be governed by the interface distance between graphene and MoS2 layers. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1411-9420 2460-1578 |
| Relation: | https://jurnal.ugm.ac.id/ijc/article/view/75538; https://doaj.org/toc/1411-9420; https://doaj.org/toc/2460-1578 |
| DOI: | 10.22146/ijc.75538 |
| URL الوصول: | https://doaj.org/article/3709f1da4e3e4dfbab4d19a678f2621e |
| رقم الأكسشن: | edsdoj.3709f1da4e3e4dfbab4d19a678f2621e |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 14119420 24601578 |
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| DOI: | 10.22146/ijc.75538 |