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Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED

التفاصيل البيبلوغرافية
العنوان: Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED
المؤلفون: Dohyun Kim, Keun Man Song, UiJin Jung, Subin Kim, Dong Su Shin, Jinsub Park
المصدر: Applied Sciences, Vol 10, Iss 4, p 1514 (2020)
بيانات النشر: MDPI AG, 2020.
سنة النشر: 2020
المجموعة: LCC:Technology
LCC:Engineering (General). Civil engineering (General)
LCC:Biology (General)
LCC:Physics
LCC:Chemistry
مصطلحات موضوعية: uv-led, interlayer, gan, mocvd, electron emission layer, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999
الوصف: In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active layer. The growth behavior of GaN with triethyl Ga (TEGa) showed an increasing growth time due to a lower growth rate compared with GaN grown with trimethyl Ga (TMGa), resulting in the formation of columnar domains and grain boundary with reduced defect. UV-A light emitting diode (LED) chips with three types of ILs and EELs, grown with different MO sources, were fabricated and evaluated by light output power (LOP) measurements. The LOP intensity of UVLED-III with the GaN barrier layer-based IL and EEL grown by TEGa was enhanced by 1.5 times compared to that of the IL and EEL grown with TMGa at 300 mA current injection. Use of the GaN barrier layer in ILs and EELs grown by TEGa improved the crystal quality of the post grown InGaN/GaN multiple quantum well, which reduces leakage current. Therefore, for the UV-A LED with ILs and EELs grown with TEGa MO precursors, electrical and optical properties were improved significantly.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2076-3417
Relation: https://www.mdpi.com/2076-3417/10/4/1514; https://doaj.org/toc/2076-3417
DOI: 10.3390/app10041514
URL الوصول: https://doaj.org/article/3797f5edba2d430a8f764fe7879a4969
رقم الأكسشن: edsdoj.3797f5edba2d430a8f764fe7879a4969
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:20763417
DOI:10.3390/app10041514