دورية أكاديمية
INVESTIGATION OF InGaN/Si DOUBLE JUNCTION TANDEM SOLAR CELLS
| العنوان: | INVESTIGATION OF InGaN/Si DOUBLE JUNCTION TANDEM SOLAR CELLS |
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| المؤلفون: | F. Bouzid, L. Hamlaoui |
| المصدر: | Journal of Fundamental and Applied Sciences, Vol 4, Iss 2, Pp 108-120 (2015) |
| بيانات النشر: | El Oued University, 2015. |
| سنة النشر: | 2015 |
| المجموعة: | LCC:Science |
| مصطلحات موضوعية: | Photovoltaic, Efficiency, Carrier lifetimes, Recombination velocity, Temperature., Science |
| الوصف: | In this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic material parameters. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency has been studied. The results show that a front recombination velocity value of 1e3cm/s is most advantageous and the use of relatively thick bottom cell is necessary to obtain conversion efficiency greater than 27%, at 300°k cell temperature. This efficiency will decrease as the operating temperature increase. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English French |
| تدمد: | 1112-9867 |
| Relation: | http://jfas.info/index.php/jfas/article/view/100; https://doaj.org/toc/1112-9867 |
| DOI: | 10.4314/jfas.v4i2.1 |
| URL الوصول: | https://doaj.org/article/c3abe91fb190448e9799dcdbebd6082e |
| رقم الأكسشن: | edsdoj.3abe91fb190448e9799dcdbebd6082e |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 11129867 |
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| DOI: | 10.4314/jfas.v4i2.1 |