دورية أكاديمية

RF-Characterization of HZO Thin Film Varactors

التفاصيل البيبلوغرافية
العنوان: RF-Characterization of HZO Thin Film Varactors
المؤلفون: Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Defu Wang, Maximilian Lederer, Ricardo Olivo, Konstantin Mertens, Jennifer Emara, Thomas Kämpfe, Gerald Gerlach
المصدر: Crystals, Vol 11, Iss 8, p 980 (2021)
بيانات النشر: MDPI AG, 2021.
سنة النشر: 2021
المجموعة: LCC:Crystallography
مصطلحات موضوعية: HZO, tunability, ALD, C-V characterisitcs, loss tangent, dielectric relaxation, Crystallography, QD901-999
الوصف: A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2073-4352
Relation: https://www.mdpi.com/2073-4352/11/8/980; https://doaj.org/toc/2073-4352
DOI: 10.3390/cryst11080980
URL الوصول: https://doaj.org/article/401a81cc17c140428dacfc7d8e9508ac
رقم الأكسشن: edsdoj.401a81cc17c140428dacfc7d8e9508ac
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:20734352
DOI:10.3390/cryst11080980