دورية أكاديمية
Methods and optoelectronic device applications of semiconductor epitaxy assisted by two-dimensional van der Waals materials
العنوان: | Methods and optoelectronic device applications of semiconductor epitaxy assisted by two-dimensional van der Waals materials |
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المؤلفون: | Aziz Ahmed, Kunook Chung, Won Il Park, Gyu-Chul Yi |
المصدر: | Journal of Information Display, Vol 25, Iss 1, Pp 75-95 (2024) |
بيانات النشر: | Taylor & Francis Group, 2024. |
سنة النشر: | 2024 |
المجموعة: | LCC:Computer engineering. Computer hardware |
مصطلحات موضوعية: | Semiconductor/2D heterostructure, Non-destructive microstructural characterization, Device integration, 2D-assisted semiconductor lift-off, Flexible semiconductor devices, Computer engineering. Computer hardware, TK7885-7895 |
الوصف: | ABSTRACTThis review summarizes research activities on two-dimensional (2D) materials-assisted epitaxy of inorganic semiconductors and their optoelectronic device applications. We presented the overall research related to the growth of epitaxial semiconductor layers on 2D van der Waals materials and discussed various methods to perform controlled growth of semiconductor nanostructures and microstructures on 2D layers. The 2D layers’ benefits in semiconductor technology and their role in non-destructive micro-crystallographic analysis, integration of heterogeneous semiconductor devices, and the fabrication of detachable semiconductor devices. This is followed by an in-depth discussion on 2D materials-assisted growth and non-destructive transfer of random and regular semiconductor arrays and their applications in free-standing, flexible, individually addressable semiconductor optoelectronic devices, including micro display applications. The research covered in this review promotes novel applications of semiconductors grown on 2D materials and exploits ways to synergistically combine their functionalities. |
نوع الوثيقة: | article |
وصف الملف: | electronic resource |
اللغة: | English |
تدمد: | 15980316 2158-1606 1598-0316 |
Relation: | https://doaj.org/toc/1598-0316; https://doaj.org/toc/2158-1606 |
DOI: | 10.1080/15980316.2024.2312942 |
URL الوصول: | https://doaj.org/article/43bb09fbb51f497c9316e8258d6a93d1 |
رقم الأكسشن: | edsdoj.43bb09fbb51f497c9316e8258d6a93d1 |
قاعدة البيانات: | Directory of Open Access Journals |
تدمد: | 15980316 21581606 |
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DOI: | 10.1080/15980316.2024.2312942 |