دورية أكاديمية

10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

التفاصيل البيبلوغرافية
العنوان: 10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides
المؤلفون: James Byers, Kapil Debnath, Hideo Arimoto, Muhammad K. Husain, Moïse Sotto, Joseph Hillier, Kian Kiang, David J. Thomson, Graham T. Reed, Martin Charlton, Shinichi Saito
المصدر: Frontiers in Physics, Vol 9 (2021)
بيانات النشر: Frontiers Media S.A., 2021.
سنة النشر: 2021
المجموعة: LCC:Physics
مصطلحات موضوعية: silicon photonics, slot-mode, polarization conversion, misaligned photonic crystal, double-SOI, anisotropic wet etching, Physics, QC1-999
الوصف: In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2296-424X
Relation: https://www.frontiersin.org/articles/10.3389/fphy.2021.659585/full; https://doaj.org/toc/2296-424X
DOI: 10.3389/fphy.2021.659585
URL الوصول: https://doaj.org/article/44291f4c1c654614bcedf01afea77c87
رقم الأكسشن: edsdoj.44291f4c1c654614bcedf01afea77c87
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:2296424X
DOI:10.3389/fphy.2021.659585