INVESTIGATION OF InGaN/Si DOUBLE JUNCTION TANDEM SOLAR CELLS

التفاصيل البيبلوغرافية
العنوان:	INVESTIGATION OF InGaN/Si DOUBLE JUNCTION TANDEM SOLAR CELLS
المؤلفون:	F. Bouzid, L. Hamlaoui
المصدر:	Journal of Fundamental and Applied Sciences, Vol 4, Iss 2, Pp 59-71 (2012)
بيانات النشر:	El Oued University, 2012.
سنة النشر:	2012
المجموعة:	LCC:Science
مصطلحات موضوعية:	Photovoltaic, Efficiency, Carrier lifetimes, Recombination velocity, Temperature., Science
الوصف:	In this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic material parameters. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency has been studied. The results show that a front recombination velocity value of 1e3cm/s is most advantageous and the use of relatively thick bottom cell is necessary to obtain conversion efficiency greater than 27%, at 300°k cell temperature. This efficiency will decrease as the operating temperature increase.
نوع الوثيقة:	article
وصف الملف:	electronic resource
اللغة:	English French
تدمد:	1112-9867
Relation:	http://jfas.info/index.php/JFAS/article/view/44/pdf; https://doaj.org/toc/1112-9867
URL الوصول:	https://doaj.org/article/481cf3b3e43941e2933724bbfd33b687
رقم الأكسشن:	edsdoj.481cf3b3e43941e2933724bbfd33b687
قاعدة البيانات:	Directory of Open Access Journals

الوصف
تدمد:	11129867