دورية أكاديمية

Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs

التفاصيل البيبلوغرافية
العنوان: Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs
المؤلفون: Zhang Jingwei, Wang Qiang, Zhang Weifeng, Tan Guojun
المصدر: IET Power Electronics, Vol 16, Iss 2, Pp 333-345 (2023)
بيانات النشر: Wiley, 2023.
سنة النشر: 2023
المجموعة: LCC:Electronics
مصطلحات موضوعية: Electronics, TK7800-8360
الوصف: Abstract In power electronic systems, when a power device turns on by mistake, there would be at least two devices in the short‐circuit (SC) current loop, forming series short‐circuit (SSC) fault. In this paper, the dynamic characteristics of SiC MOSFETs, Si IGBTs in SSC are investigated based on the half‐bridge circuit. The effect laws of load current and junction temperature to voltage division in SSC are discussed. Taking a three‐level (3‐L) active neutral point clamped (ANPC) topology based on hybrid utilization of Si IGBT and SiC MOSFET as the research object, the SSC performance is investigated. The theoretical and experimental results show that, in the process of SSC, the voltage division features of SiC MOSFETs and Si IGBTs are different and highly sensitive to circuit parameters. When both SiC MOSFET and Si IGBT are in the SC current loop, the device with a lower saturation current level limits the short circuit current and bears most of the dc‐bus voltage. Moreover, in the Si/SiC hybrid 3‐L ANPC topology, if the saturation current of selected SiC MOSFETs is higher than that of Si IGBTs, the SC withstanding level of SiC MOSFETs could be improved, thereby reducing the SC protection circuit requirements.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1755-4543
1755-4535
Relation: https://doaj.org/toc/1755-4535; https://doaj.org/toc/1755-4543
DOI: 10.1049/pel2.12374
URL الوصول: https://doaj.org/article/49dd042b557040bca67ff4d4f66c2b31
رقم الأكسشن: edsdoj.49dd042b557040bca67ff4d4f66c2b31
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:17554543
17554535
DOI:10.1049/pel2.12374