دورية أكاديمية
Layer-controlled fractal growth of vanadium-doped molybdenum disulfide
| العنوان: | Layer-controlled fractal growth of vanadium-doped molybdenum disulfide |
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| المؤلفون: | Xinyue Miao, Yingjie Xu, Hongyu Chen, Xiying Ma, Fei Wang, Xiaohua Zhang, Jingyun Zou |
| المصدر: | Materials Research Letters, Vol 12, Iss 7, Pp 484-492 (2024) |
| بيانات النشر: | Taylor & Francis Group, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Materials of engineering and construction. Mechanics of materials |
| مصطلحات موضوعية: | Molybdenum disulfide, doping engineering, layer controlled, fractal growth, mechanism analysis, Materials of engineering and construction. Mechanics of materials, TA401-492 |
| الوصف: | Vanadium doping can effectively modify the physical properties of transition metal dichalcogenides (TMDCs), broadening their application prospect in electronic, spintronic, and valleytronic devices. However, vanadium dopants always suppress the growth of TMDCs and lower the growth controllability. Here, we report the morphology-controlled growth of vanadium-doped MoS2 (V-MoS2). Both the layer-controlled growth and fractal growth of monolayer V-MoS2 were realized, and the mechanism was analyzed, including contributions from the localized concentration of Mo atoms, the etching effect, and formation energies of different terminations. It will shed light on the morphology-controlled growth of other vanadium-doped TMDCs, promoting the construction of novel devices. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 21663831 2166-3831 |
| Relation: | https://doaj.org/toc/2166-3831 |
| DOI: | 10.1080/21663831.2024.2349247 |
| URL الوصول: | https://doaj.org/article/a4bb76880c3742ea9bfe31ed1b39ae95 |
| رقم الأكسشن: | edsdoj.4bb76880c3742ea9bfe31ed1b39ae95 |
| قاعدة البيانات: | Directory of Open Access Journals |
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Full Text Finder | تدمد: | 21663831 |
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| DOI: | 10.1080/21663831.2024.2349247 |