دورية أكاديمية
Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs
| العنوان: | Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs |
|---|---|
| المؤلفون: | Luca Panarella, Ben Kaczer, Quentin Smets, Stanislav Tyaginov, Pablo Saraza Canflanca, Andrea Vici, Devin Verreck, Tom Schram, Dennis Lin, Theresia Knobloch, Tibor Grasser, César Lockhart de la Rosa, Gouri S. Kar, Valeri Afanas’ev |
| المصدر: | npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024) |
| بيانات النشر: | Nature Portfolio, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Materials of engineering and construction. Mechanics of materials LCC:Chemistry |
| مصطلحات موضوعية: | Materials of engineering and construction. Mechanics of materials, TA401-492, Chemistry, QD1-999 |
| الوصف: | Abstract Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited number of low Schottky barrier spots through which channel carriers are predominantly injected is demonstrated by the dramatic current changes induced by individual charge traps located near the source contact. Two distinct types of “contact-impacting traps” are identified. Type-1 trap is adjacent to the contact interface and exchanges carriers with the metal. Its impact is only observable when the adjacent contact is the reverse-biased FET source and limits the channel current. Type-2 trap is located in the AlOx gate oxide interlayer, near the source contact, and exchanges carriers with the channel. Its capture/emission time constants exhibit both a gate and drain bias dependence due to the high sensitivity of the contact regions to the applied lateral and vertical fields. Unlike typical channel-impacting oxide traps, both types of reported defects affect the Schottky barrier height and width rather than the threshold voltage and result in giant random telegraph noise (RTN). These observations indicate that the contact quality and geometry play a fundamental role in the ultimate scaling of 2D FETs. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2397-7132 |
| Relation: | https://doaj.org/toc/2397-7132 |
| DOI: | 10.1038/s41699-024-00482-9 |
| URL الوصول: | https://doaj.org/article/4dc4c462dd604865a0278a59c121b370 |
| رقم الأكسشن: | edsdoj.4dc4c462dd604865a0278a59c121b370 |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 23977132 |
|---|---|
| DOI: | 10.1038/s41699-024-00482-9 |