دورية أكاديمية
Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes
العنوان: | Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes |
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المؤلفون: | Ah-Hyun Park, Tae-Hoon Seo |
المصدر: | Materials, Vol 16, Iss 22, p 7216 (2023) |
بيانات النشر: | MDPI AG, 2023. |
سنة النشر: | 2023 |
المجموعة: | LCC:Technology LCC:Electrical engineering. Electronics. Nuclear engineering LCC:Engineering (General). Civil engineering (General) LCC:Microscopy LCC:Descriptive and experimental mechanics |
مصطلحات موضوعية: | hexagonal boron nitride, GaN, graphene, near-ultraviolet light-emitting diode, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85 |
الوصف: | We introduce the development of gallium nitride (GaN) layers by employing graphene and hexagonal boron nitride (h-BN) as intermediary substrates. This study demonstrated the successful growth of GaN with a uniformly smooth surface morphology on h-BN. In order to evaluate the crystallinity of GaN grown on h-BN, a comparison was conducted with GaN grown on a sapphire substrate. Photoluminescence spectroscopy and X-ray diffraction confirmed that the crystallinity of GaN deposited on h-BN was inferior to that of GaN grown on conventional GaN. To validate the practical applicability of the GaN layer grown on h-BN, we subsequently grew an NUV-LED structure and fabricated a device that operated well in optoelectrical performance experiments. Our findings validate the potential usefulness of h-BN to be a substrate in the direct growth of a GaN layer. |
نوع الوثيقة: | article |
وصف الملف: | electronic resource |
اللغة: | English |
تدمد: | 1996-1944 |
Relation: | https://www.mdpi.com/1996-1944/16/22/7216; https://doaj.org/toc/1996-1944 |
DOI: | 10.3390/ma16227216 |
URL الوصول: | https://doaj.org/article/4e07afd01b654bc7b726b8ab8db606f7 |
رقم الأكسشن: | edsdoj.4e07afd01b654bc7b726b8ab8db606f7 |
قاعدة البيانات: | Directory of Open Access Journals |
تدمد: | 19961944 |
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DOI: | 10.3390/ma16227216 |