دورية أكاديمية

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

التفاصيل البيبلوغرافية
العنوان: Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers
المؤلفون: Oksana Yastrubchak, Nataliia Tataryn, Lukasz Gluba, Sergii Mamykin, Janusz Sadowski, Tomasz Andrearczyk, Jaroslaw Z. Domagala, Olga Kondratenko, Volodymyr Romanyuk, Olena Fedchenko, Yaryna Lytvynenko, Olena Tkach, Dmitry Vasilyev, Sergey Babenkov, Katerina Medjanik, Katarzyna Gas, Maciej Sawicki, Tadeusz Wosinski, Gerd Schönhense, Hans-Joachim Elmers
المصدر: Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
بيانات النشر: Nature Portfolio, 2023.
سنة النشر: 2023
المجموعة: LCC:Medicine
LCC:Science
مصطلحات موضوعية: Medicine, Science
الوصف: Abstract The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease in the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin–orbit split-off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2045-2322
Relation: https://doaj.org/toc/2045-2322
DOI: 10.1038/s41598-023-43702-w
URL الوصول: https://doaj.org/article/4e457f981bd0410e941bf5fab96403d5
رقم الأكسشن: edsdoj.4e457f981bd0410e941bf5fab96403d5
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:20452322
DOI:10.1038/s41598-023-43702-w