We investigated in-plane current-induced magnetization switching in a Mn4N epitaxial single layer. Efficient magnetization switching was detected via the measurement of anomalous Hall resistivity after the application of current pulses, with a duration of 1 s, to the 111-oriented Mn4N film compared with a reference 001-oriented Mn4N film. The threshold current density of magnetization switching with 0.5 s pulse durations, Jc ≈ 1 MA/cm2, was relatively low compared with that reported for magnetic tunnel junctions and/or ferromagnet/heavy metal bilayer systems. The relatively low Jc in the 111-oriented film was attributed to the low magnetic anisotropy on the (111) plane of Mn4N owing to the isotropic crystal symmetry as revealed by x-ray diffraction and transmission electron microscopy as a reduced switching barrier boosts the probability of magnetization switching. It was concluded that manipulation of the magnetic anisotropy based on the crystal orientation is one of the promising approaches to develop materials suitable for application in highly efficient switching devices with Mn4N layers.
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