دورية أكاديمية
Effect of nano-scratch speed on removal behavior of single crystal silicon
| العنوان: | Effect of nano-scratch speed on removal behavior of single crystal silicon |
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| المؤلفون: | Hailan TIAN, Shaohua YAN, Zhenzhen SUN, Haochang WANG, Haipeng YAN |
| المصدر: | Jin'gangshi yu moliao moju gongcheng, Vol 44, Iss 3, Pp 319-326 (2024) |
| بيانات النشر: | Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd., 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Materials of engineering and construction. Mechanics of materials LCC:Mechanical engineering and machinery |
| مصطلحات موضوعية: | single crystal silicon, nano-scratch, molecular dynamics, scratching speed, strain rate, Materials of engineering and construction. Mechanics of materials, TA401-492, Mechanical engineering and machinery, TJ1-1570 |
| الوصف: | As a typical hard and brittle material, single-crystal silicon exhibits different strain rates at varying scratching speeds, leading to diverse material removal behaviors. Molecular dynamics was used to study the deformation and removal processes of single-crystal silicon at different scratching speeds from the perspective of strain rate. The results show that the strain rate of the material increases from 1.25 × 1010 s−1 to 1.25 × 1011 s−1 as the scratching speed increases from 25 m/s to 250 m/s. At the same time, the scratching parameters, including scratching force, shear stress, and friction coefficient, decrease while the scratching temperature increases. Additionally, the contour accuracy and roughness of the scratch surface improve with increased scratching speeds. Amorphization and phase transformation during the scratching process are the main mechanisms of nanoscale deformation in single-crystal silicon. The depth of the subsurface damage layer decreases from 2.24 nm to 1.89 nm with the increase of shear stress, while the depth of the amorphous layer increases with the rise in scratching temperature. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | Chinese |
| تدمد: | 1006-852X |
| Relation: | https://doaj.org/toc/1006-852X |
| DOI: | 10.13394/j.cnki.jgszz.2023.0124 |
| URL الوصول: | https://doaj.org/article/547e131ac40d401b9a77aea353a4b7a0 |
| رقم الأكسشن: | edsdoj.547e131ac40d401b9a77aea353a4b7a0 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 1006852X |
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| DOI: | 10.13394/j.cnki.jgszz.2023.0124 |