دورية أكاديمية

Atomic Layer Deposition of HfO2 Films Using TDMAH and Water or Ammonia Water

التفاصيل البيبلوغرافية
العنوان: Atomic Layer Deposition of HfO2 Films Using TDMAH and Water or Ammonia Water
المؤلفون: Sylwia Gieraltowska, Lukasz Wachnicki, Piotr Dluzewski, Bartlomiej S. Witkowski, Marek Godlewski, Elzbieta Guziewicz
المصدر: Materials, Vol 16, Iss 11, p 4077 (2023)
بيانات النشر: MDPI AG, 2023.
سنة النشر: 2023
المجموعة: LCC:Technology
LCC:Electrical engineering. Electronics. Nuclear engineering
LCC:Engineering (General). Civil engineering (General)
LCC:Microscopy
LCC:Descriptive and experimental mechanics
مصطلحات موضوعية: ALD, high-k dielectric, HfO2, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
الوصف: Atomic layer deposition of HfO2 from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been recorded in the range of 1.2–1.6 Å. At low temperatures (≤100 °C), the films grew faster and are structurally more disordered, amorphous and/or polycrystalline with crystal sizes up to 29 nm, compared to the films grown at higher temperatures. At high temperatures of 240 °C, the films are better crystallized with crystal sizes of 38–40 nm but grew slower. GPC, dielectric constant, and crystalline structure are improved by depositing at temperatures above 300 °C. The dielectric constant value and the roughness of the films have been determined for monoclinic HfO2, a mixture of orthorhombic and monoclinic, as well as for amorphous HfO2. Moreover, the present study shows that the increase in the dielectric constant of the films can be achieved by using ammonia water as an oxygen precursor in the ALD growth. The detailed investigations of the relationship between HfO2 properties and growth parameters presented here have not been reported so far, and the possibilities of fine-tuning and controlling the structure and performance of these layers are still being sought.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1996-1944
Relation: https://www.mdpi.com/1996-1944/16/11/4077; https://doaj.org/toc/1996-1944
DOI: 10.3390/ma16114077
URL الوصول: https://doaj.org/article/54957a8e8c47428190ff4d5895837821
رقم الأكسشن: edsdoj.54957a8e8c47428190ff4d5895837821
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:19961944
DOI:10.3390/ma16114077