دورية أكاديمية
Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy
| العنوان: | Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy |
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| المؤلفون: | Takeki Itoh, Akhil Mauze, Yuewei Zhang, James S. Speck |
| المصدر: | APL Materials, Vol 11, Iss 4, Pp 041108-041108-6 (2023) |
| بيانات النشر: | AIP Publishing LLC, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Biotechnology LCC:Physics |
| مصطلحات موضوعية: | Biotechnology, TP248.13-248.65, Physics, QC1-999 |
| الوصف: | We report the continuous Si doping in β-Ga2O3 epitaxial films grown by plasma-assisted molecular beam epitaxy through the use of a valved effusion cell for the Si source. Secondary ion mass spectroscopy results exhibit that the Si doping profiles in β-Ga2O3 are flat and have sharp turn-on/off depth profiles. The Si doping concentration was able to be controlled by either varying the cell temperatures or changing the aperture of the valve of the Si effusion cell. High crystal quality and smooth surface morphologies were confirmed on Si-doped β-Ga2O3 epitaxial films grown on (010) and (001) substrates. The electronic properties of Si-doped (001) β-Ga2O3 epitaxial film showed an electron mobility of 67 cm2/Vs at the Hall concentration of 3 × 1018 cm−3. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2166-532X |
| Relation: | https://doaj.org/toc/2166-532X |
| DOI: | 10.1063/5.0130654 |
| URL الوصول: | https://doaj.org/article/54c869bdfb52411cb7b4fc9349764c15 |
| رقم الأكسشن: | edsdoj.54c869bdfb52411cb7b4fc9349764c15 |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Scitation. 
Full Text Finder | تدمد: | 2166532X |
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| DOI: | 10.1063/5.0130654 |