Robust In-Zn‑O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers
التفاصيل البيبلوغرافية
العنوان:
Robust In-Zn‑O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers