دورية أكاديمية
RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography
| العنوان: | RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography |
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| المؤلفون: | Yuji Ando, Hidemasa Takahashi, Ryutaro Makisako, Akio Wakejima, Jun Suda |
| المصدر: | Electronics Letters, Vol 59, Iss 10, Pp n/a-n/a (2023) |
| بيانات النشر: | Wiley, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Electrical engineering. Electronics. Nuclear engineering |
| مصطلحات موضوعية: | high electron mobility transistors, microwave amplifiers, millimetre‐wave amplifiers, wide band gap semiconductors, Electrical engineering. Electronics. Nuclear engineering, TK1-9971 |
| الوصف: | Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique. The authors have developed two different gate structures that were a field‐plated gate using the lift‐off process and a Y‐shaped gate using the ion‐milling process. Fabricated HEMTs using these different gate structures exhibited nearly equivalent DC characteristics. The field‐plated gate device showed a unity current gain cutoff frequency (fT) of 35 GHz and a maximum oscillation frequency (fmax) of 106 GHz, while the Y‐shaped gate device showed fT of 36 GHz and fmax of 115 GHz. The equivalent circuit analysis indicated a decrease in the gate‐drain capacitance and the drain conductance is responsible for the improved fmax in the Y‐shaped gate device. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1350-911X 0013-5194 |
| Relation: | https://doaj.org/toc/0013-5194; https://doaj.org/toc/1350-911X |
| DOI: | 10.1049/ell2.12798 |
| URL الوصول: | https://doaj.org/article/acd56a6c3924475d95f28c55cc4575c8 |
| رقم الأكسشن: | edsdoj.56a6c3924475d95f28c55cc4575c8 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 1350911X 00135194 |
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| DOI: | 10.1049/ell2.12798 |