دورية أكاديمية
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
| العنوان: | Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes |
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| المؤلفون: | Jiarui Gong, Jie Zhou, Ping Wang, Tae‐Hyeon Kim, Kuangye Lu, Seunghwan Min, Ranveer Singh, Moheb Sheikhi, Haris Naeem Abbasi, Daniel Vincent, Ding Wang, Neil Campbell, Timothy Grotjohn, Mark Rzchowski, Jeehwan Kim, Edward T. Yu, Zetian Mi, Zhenqiang Ma |
| المصدر: | Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023) |
| بيانات النشر: | Wiley-VCH, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Electric apparatus and materials. Electric circuits. Electric networks LCC:Physics |
| مصطلحات موضوعية: | aluminum nitride (AlN), piezoresponse force microscopy, scanning transmission electron microscopy, single‐crystalline nanomembranes, transfer‐printing, ultra‐wide bandgap (UWBG), Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999 |
| الوصف: | Abstract Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great attention over the last decade, which poses great advantages to complex device integration. Applications in heterogeneous electronics and flexible electronics have been demonstrated with various semiconductor nanomembranes. Single‐crystalline aluminum nitride (AlN), as an ultrawide‐bandgap semiconductor with great potential in applications such as high‐power electronics has not been demonstrated in its NM forms. This very first report demonstrates the creation, transfer‐printing, and characteristics of the high‐quality single‐crystalline AlN NMs. This work successfully transfers the AlN NMs onto various foreign substrates. The crystalline quality of the NMs has been characterized by a broad range of techniques before and after the transfer‐printing and no degradation in crystal quality has been observed. Interestingly, a partial relaxation of the tensile stress has been observed when comparing the original as‐grown AlN epi and the transferred AlN NMs. In addition, the transferred AlN NMs exhibits the presence of piezoelectricity at the nanoscale, as confirmed by piezoelectric force microscopy. This work also comments on the advantages and the challenges of the approach. Potentially, the novel approach opens a viable path for the development of the AlN‐based heterogeneous integration and future novel electronics and optoelectronics. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2199-160X |
| Relation: | https://doaj.org/toc/2199-160X |
| DOI: | 10.1002/aelm.202201309 |
| URL الوصول: | https://doaj.org/article/57794e0abe3d4502bfad6fb48b142f61 |
| رقم الأكسشن: | edsdoj.57794e0abe3d4502bfad6fb48b142f61 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 2199160X |
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| DOI: | 10.1002/aelm.202201309 |