دورية أكاديمية

GHz bursts in MHz burst (BiBurst) enabling high-speed femtosecond laser ablation of silicon due to prevention of air ionization

التفاصيل البيبلوغرافية
العنوان: GHz bursts in MHz burst (BiBurst) enabling high-speed femtosecond laser ablation of silicon due to prevention of air ionization
المؤلفون: Kotaro Obata, Francesc Caballero-Lucas, Shota Kawabata, Godai Miyaji, Koji Sugioka
المصدر: International Journal of Extreme Manufacturing, Vol 5, Iss 2, p 025002 (2023)
بيانات النشر: IOP Publishing, 2023.
سنة النشر: 2023
المجموعة: LCC:Materials of engineering and construction. Mechanics of materials
LCC:Industrial engineering. Management engineering
LCC:Physics
مصطلحات موضوعية: BiBurst mode, GHz burst, laser ablation, silicon, air ionization, Materials of engineering and construction. Mechanics of materials, TA401-492, Industrial engineering. Management engineering, T55.4-60.8, Physics, QC1-999
الوصف: For the practical use of femtosecond laser ablation, inputs of higher laser intensity are preferred to attain high-throughput material removal. However, the use of higher laser intensities for increasing ablation rates can have detrimental effects on ablation quality due to excess heat generation and air ionization. This paper employs ablation using BiBurst femtosecond laser pulses, which consist of multiple bursts (2 and 5 bursts) at a repetition rate of 64 MHz, each containing multiple intra-pulses (2–20 pulses) at an ultrafast repetition rate of 4.88 GHz, to overcome these conflicting conditions. Ablation of silicon substrates using the BiBurst mode with 5 burst pulses and 20 intra-pulses successfully prevents air breakdown at packet energies higher than the pulse energy inducing the air ionization by the conventional femtosecond laser pulse irradiation (single-pulse mode). As a result, ablation speed can be enhanced by a factor of 23 without deteriorating the ablation quality compared to that by the single-pulse mode ablation under the conditions where the air ionization is avoided.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2631-7990
Relation: https://doaj.org/toc/2631-7990
DOI: 10.1088/2631-7990/acc0e5
URL الوصول: https://doaj.org/article/585d1b0bb3c14399a91b79260aa63e19
رقم الأكسشن: edsdoj.585d1b0bb3c14399a91b79260aa63e19
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:26317990
DOI:10.1088/2631-7990/acc0e5