The shape memory thin films are most suitable candidates as actuators in MEMS applications than other smart materials due to its ability to produce larger recovery strains at low operation voltages. Recently, Ti based shape memory alloys are gaining attention due to its ability to produce stable shape memory properties at high temperatures. In current study, Ti-Zr-Mo high-temperature shape memory thin films were fabricated using multi-target DC/RF magnetron sputtering system on Si (100) substrate. Deposition time and target power were varied to obtain the desired composition. Post-annealing was carried out at 500 °C, 600 °C and 700 °C for 15 min each to crystallize the thin films that were amorphous in the homogenized condition. The annealing temperature was varied to observe the structural and morphological changes. The total thickness of the film was found to be around 300 nm measured from the cross-sectional micrographs. The results suggest that flatness of surface topography is attributed to higher ad-atom mobility with increasing the annealing temperature. The martensite phase (α’) was observed after annealing at 500 °C and the formation of silicides was observed with annealing at higher temperatures. The transformation temperature of 220 °C was obtained from electrical resistivity measurement. The enhanced mechanical properties with maintaining structural stability was observed in Ti-Zr-Mo thin film annealed at 500 °C for 15 min.
Full Text Finder