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Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation

التفاصيل البيبلوغرافية
العنوان: Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation
المؤلفون: Tingting Zhong, Lina Zeng, Junfeng Yang, Yichao Shu, Li Sun, Zaijin Li, Hao Chen, Guojun Liu, Zhongliang Qiao, Yi Qu, Dongxin Xu, Lianhe Li, Lin Li
المصدر: Materials, Vol 17, Iss 5, p 1090 (2024)
بيانات النشر: MDPI AG, 2024.
سنة النشر: 2024
المجموعة: LCC:Technology
LCC:Electrical engineering. Electronics. Nuclear engineering
LCC:Engineering (General). Civil engineering (General)
LCC:Microscopy
LCC:Descriptive and experimental mechanics
مصطلحات موضوعية: antimonene, electron beam, deposition rate, Ge/Si substrate, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
الوصف: Antimonene has attracted much attention due to its excellent characteristics of high carrier mobility, thermoelectric properties and high stability. It has great application prospects in Q-switched lasers, laser protection and spintronics. At present, the epitaxy growth of antimonene mainly depends on molecular beam epitaxy. We have successfully prepared antimonene films on silicon, germanium/silicon substrates for the first time using electron beam evaporation coating and studied the effects of the deposition rate and substrate on the preparation of antimonene; film characterization was performed via confocal microprobe Raman spectroscopy, via X-ray diffraction and using a scanning electron microscope. Raman spectroscopy showed that different deposition rates can lead to the formation of different structures of antimonene, such as α phase and β phase. At the same time, it was found that the growth of antimonene is also affected by different substrates and ion beams.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1996-1944
Relation: https://www.mdpi.com/1996-1944/17/5/1090; https://doaj.org/toc/1996-1944
DOI: 10.3390/ma17051090
URL الوصول: https://doaj.org/article/5cdf8a33b39c470585c08cc9ea433223
رقم الأكسشن: edsdoj.5cdf8a33b39c470585c08cc9ea433223
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:19961944
DOI:10.3390/ma17051090