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Recent Progress in Source/Drain Ohmic Contact with β-Ga2O3

التفاصيل البيبلوغرافية
العنوان: Recent Progress in Source/Drain Ohmic Contact with β-Ga2O3
المؤلفون: Lin-Qing Zhang, Wan-Qing Miao, Xiao-Li Wu, Jing-Yi Ding, Shao-Yong Qin, Jia-Jia Liu, Ya-Ting Tian, Zhi-Yan Wu, Yan Zhang, Qian Xing, Peng-Fei Wang
المصدر: Inorganics, Vol 11, Iss 10, p 397 (2023)
بيانات النشر: MDPI AG, 2023.
سنة النشر: 2023
المجموعة: LCC:Inorganic chemistry
مصطلحات موضوعية: β-Ga2O3, Ohmic contact, ion implantation, interface, annealing temperature, Inorganic chemistry, QD146-197
الوصف: β-Ga2O3, with excellent bandgap, breakdown field, and thermal stability properties, is considered to be one of the most promising candidates for power devices including field-effect transistors (FETs) and for other applications such as Schottky barrier diodes (SBDs) and solar-blind ultraviolet photodetectors. Ohmic contact is one of the key steps in the β-Ga2O3 device fabrication process for power applications. Ohmic contact techniques have been developed in recent years, and they are summarized in this review. First, the basic theory of metal–semiconductor contact is introduced. After that, the representative literature related to Ohmic contact with β-Ga2O3 is summarized and analyzed, including the electrical properties, interface microstructure, Ohmic contact formation mechanism, and contact reliability. In addition, the promising alternative schemes, including novel annealing techniques and Au-free contact materials, which are compatible with the CMOS process, are discussed. This review will help our theoretical understanding of Ohmic contact in β-Ga2O3 devices as well as the development trends of Ohmic contact schemes.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 11100397
2304-6740
77276124
Relation: https://www.mdpi.com/2304-6740/11/10/397; https://doaj.org/toc/2304-6740
DOI: 10.3390/inorganics11100397
URL الوصول: https://doaj.org/article/6b03f77276124a78ab7b6be67b0e9922
رقم الأكسشن: edsdoj.6b03f77276124a78ab7b6be67b0e9922
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:11100397
23046740
77276124
DOI:10.3390/inorganics11100397