دورية أكاديمية
أعرض في EDS

Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

التفاصيل البيبلوغرافية
العنوان: Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk
المؤلفون: Hao Wu, Lian Ji, Ryo Harasawa, Yuya Yasue, Takanori Aritake, Canyu Jiang, Shulong Lu, Atsushi Tackeuchi
المصدر: AIP Advances, Vol 6, Iss 8, Pp 085119-085119-7 (2016)
بيانات النشر: AIP Publishing LLC, 2016.
سنة النشر: 2016
المجموعة: LCC:Physics
مصطلحات موضوعية: Physics, QC1-999
الوصف: The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2158-3226
48048011
Relation: https://doaj.org/toc/2158-3226
DOI: 10.1063/1.4961948
URL الوصول: https://doaj.org/article/702481f04dff48048011222dc2cbc1f0
رقم الأكسشن: edsdoj.702481f04dff48048011222dc2cbc1f0
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:21583226
48048011
DOI:10.1063/1.4961948