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Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes

التفاصيل البيبلوغرافية
العنوان: Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes
المؤلفون: Gun-Hee Lee, Tran-Viet Cuong, Dong-Kyu Yeo, Hyunjin Cho, Beo-Deul Ryu, Eun-Mi Kim, Tae-Sik Nam, Eun-Kyung Suh, Tae-Hoon Seo, Chang-Hee Hong
المصدر: Applied Sciences, Vol 11, Iss 19, p 9321 (2021)
بيانات النشر: MDPI AG, 2021.
سنة النشر: 2021
المجموعة: LCC:Technology
LCC:Engineering (General). Civil engineering (General)
LCC:Biology (General)
LCC:Physics
LCC:Chemistry
مصطلحات موضوعية: light emitting diodes, h-BN, passivation, operating temperature, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999
الوصف: We introduce a low temperature process for coating InGaN/GaN light-emitting diodes (LEDs) with h-BN as a passivation layer. The effect of h-BN on device performance and reliability is investigated. At −5 V, the leakage current of the h-BN passivated LED was −1.15 × 10−9 A, which was one order lower than the reference LED’s leakage current of −1.09 × 10−8 A. The h-BN layer minimizes the leakage current characteristics and operating temperature by acting as a passivation and heat dispersion layer. With a reduced working temperature of 33 from 45 °C, the LED lifetime was extended 2.5 times following h-BN passivation. According to our findings, h-BN passivation significantly improves LED reliability.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2076-3417
Relation: https://www.mdpi.com/2076-3417/11/19/9321; https://doaj.org/toc/2076-3417
DOI: 10.3390/app11199321
URL الوصول: https://doaj.org/article/7073e5e94ac04adea4e0fe648657cc4c
رقم الأكسشن: edsdoj.7073e5e94ac04adea4e0fe648657cc4c
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:20763417
DOI:10.3390/app11199321