دورية أكاديمية
Si and Sn doping of ε-Ga2O3 layers
| العنوان: | Si and Sn doping of ε-Ga2O3 layers |
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| المؤلفون: | A. Parisini, A. Bosio, V. Montedoro, A. Gorreri, A. Lamperti, M. Bosi, G. Garulli, S. Vantaggio, R. Fornari |
| المصدر: | APL Materials, Vol 7, Iss 3, Pp 031114-031114-6 (2019) |
| بيانات النشر: | AIP Publishing LLC, 2019. |
| سنة النشر: | 2019 |
| المجموعة: | LCC:Biotechnology LCC:Physics |
| مصطلحات موضوعية: | Biotechnology, TP248.13-248.65, Physics, QC1-999 |
| الوصف: | Low resistivity n-type ε-Ga2O3 epilayers were obtained for the first time either by adding silane to the gas phase during the metal organic vapour phase epitaxy deposition or by diffusing Sn in nominally undoped layers after the growth. The highest doping concentrations were few 1018 cm−3 and about 1017 cm−3 for Si and Sn doping, with corresponding resistivity below 1 and 10 Ω cm, respectively. Temperature dependent transport investigation in the range of 10-600 K shows a resistivity behavior consistent with the Mott law, suggesting that conduction through localized states dominates the electrical properties of Si- and Sn-doped samples. For both types of dopants, two different mechanisms of conduction through impurity band states seem to be present, each of them determining the transport behavior at the lower and higher temperatures of the measurement range. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2166-532X |
| Relation: | https://doaj.org/toc/2166-532X |
| DOI: | 10.1063/1.5050982 |
| URL الوصول: | https://doaj.org/article/73b3adcc12aa4509a2811e633b11b21e |
| رقم الأكسشن: | edsdoj.73b3adcc12aa4509a2811e633b11b21e |
| قاعدة البيانات: | Directory of Open Access Journals |
Find this article in full text from Scitation. 
Full Text Finder | تدمد: | 2166532X |
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| DOI: | 10.1063/1.5050982 |