We report on the fabrication and characterization of a new type of mid-infrared photodetector. The infrared sensitive element of the detector is a PbSe single quantum well (SQW) embedded in an intrinsic region of a CdTe p-i-n diode. Electron-beam-induced current (EBIC) measurements confirm the location of the PbSe SQW near the middle of the intrinsic CdTe layer. The measured diffusion length of minority carriers of about 0.5 μm allows effective collecting of the photoexcited carriers in the highly doped regions of the diodes. The PbSe/CdTe heterostructures exhibit a strong photosensitivity in the mid-infrared spectral region. Photo-response measurements show abnormal temperature dependence of the photosensitivity. The photo-response signal increases with decreasing temperature reaching a maximum at about 170 K and upon a further decrease in temperature the signal weakens and vanishes at about 100 K. Current-voltage measurements demonstrate very good junction characteristics with a rectifying ratio of 585 at ± 0.5 V and an ideality factor of 1.05 at room temperature. Possible mechanisms of carrier transport trough the junction are discussed.
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