دورية أكاديمية
High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region
| العنوان: | High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region |
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| المؤلفون: | Quentin Gaimard, Guy Aubin, Kamel Merghem, Michel Krakowski, Olivier Parillaud, Sylvain Barbay, Abderrahim Ramdane |
| المصدر: | IEEE Photonics Journal, Vol 11, Iss 1, Pp 1-5 (2019) |
| بيانات النشر: | IEEE, 2019. |
| سنة النشر: | 2019 |
| المجموعة: | LCC:Applied optics. Photonics LCC:Optics. Light |
| مصطلحات موضوعية: | Mode-locked laser, near infrared, semiconductor laser diode, Al free, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467 |
| الوصف: | We report on a mode locked semiconductor laser for high-power pulse generation in the 810-nm waveband. This is based on a novel GaAsP/GaInP single quantum-well structure, with Aluminum-free active region. Average output powers higher than 40 mW are reported in narrow ridge two-section devices. A 1.65-mm-long laser with 70 μm saturable absorber yields a stable mode locked regime at a 23-GHz repetition rate as evidenced by a record low RF linewidth of 75 kHz over a wide range of gain currents. Other laser dynamics are also reported at lower frequencies. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1943-0655 |
| Relation: | https://ieeexplore.ieee.org/document/8586880/; https://doaj.org/toc/1943-0655 |
| DOI: | 10.1109/JPHOT.2018.2886460 |
| URL الوصول: | https://doaj.org/article/cda789d5365a4f3bad0fd416164bae8a |
| رقم الأكسشن: | edsdoj.789d5365a4f3bad0fd416164bae8a |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 19430655 |
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| DOI: | 10.1109/JPHOT.2018.2886460 |